Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis
The possibility of graphene synthesis (the bottom-up approach) in plasma and the effective control of the morphology and electrical properties of graphene-based layers were demonstrated. Graphene flakes were grown in a plasma jet generated by a direct current plasma torch with helium and argon as th...
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doaj-bda47e042037414a96aa8f1d19b654f52020-11-25T03:37:35ZengMDPI AGNanomaterials2079-49912020-10-01102050205010.3390/nano10102050Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted SynthesisIrina V. Antonova0Marina B. Shavelkina1Artem I. Ivanov2Regina A. Soots3Peter P. Ivanov4Alexey N. Bocharov5Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, RussiaJoint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, RussiaRzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, RussiaJoint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, RussiaJoint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, RussiaThe possibility of graphene synthesis (the bottom-up approach) in plasma and the effective control of the morphology and electrical properties of graphene-based layers were demonstrated. Graphene flakes were grown in a plasma jet generated by a direct current plasma torch with helium and argon as the plasma-forming gases. In the case of argon plasma, the synthesized graphene flakes were relatively thick (2–6 nm) and non-conductive. In helium plasma, for the first time, graphene with a predominance of monolayer flakes and high conductivity was grown in a significant amount using an industrial plasma torch. One-dimensional (1D) flow modeling shows that the helium plasma is a less charged environment providing the formation of thinner graphene flakes with low defect density. These flakes might be used for a water-based suspension of the graphene with PEDOT:PSS (poly(3,4-ethylenedioxythiophene): polystyrene sulfonate) composite to create the structures employing the 2D printing technologies. Good structural quality, low layer resistance, and good mechanical strength combined with the ability to obtain a large amount of the graphene powder, and to control the parameters of the synthesized particles make this material promising for various applications and, above all, for sensors and other devices for flexible electronics and the Internet of things ecosystem.https://www.mdpi.com/2079-4991/10/10/2050DC plasma synthesisgraphene flakesquasi-one-dimensional flowcomposite filmselectrical properties2D printing technologies |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Irina V. Antonova Marina B. Shavelkina Artem I. Ivanov Regina A. Soots Peter P. Ivanov Alexey N. Bocharov |
spellingShingle |
Irina V. Antonova Marina B. Shavelkina Artem I. Ivanov Regina A. Soots Peter P. Ivanov Alexey N. Bocharov Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis Nanomaterials DC plasma synthesis graphene flakes quasi-one-dimensional flow composite films electrical properties 2D printing technologies |
author_facet |
Irina V. Antonova Marina B. Shavelkina Artem I. Ivanov Regina A. Soots Peter P. Ivanov Alexey N. Bocharov |
author_sort |
Irina V. Antonova |
title |
Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis |
title_short |
Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis |
title_full |
Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis |
title_fullStr |
Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis |
title_full_unstemmed |
Graphene Flakes for Electronic Applications: DC Plasma Jet-Assisted Synthesis |
title_sort |
graphene flakes for electronic applications: dc plasma jet-assisted synthesis |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2020-10-01 |
description |
The possibility of graphene synthesis (the bottom-up approach) in plasma and the effective control of the morphology and electrical properties of graphene-based layers were demonstrated. Graphene flakes were grown in a plasma jet generated by a direct current plasma torch with helium and argon as the plasma-forming gases. In the case of argon plasma, the synthesized graphene flakes were relatively thick (2–6 nm) and non-conductive. In helium plasma, for the first time, graphene with a predominance of monolayer flakes and high conductivity was grown in a significant amount using an industrial plasma torch. One-dimensional (1D) flow modeling shows that the helium plasma is a less charged environment providing the formation of thinner graphene flakes with low defect density. These flakes might be used for a water-based suspension of the graphene with PEDOT:PSS (poly(3,4-ethylenedioxythiophene): polystyrene sulfonate) composite to create the structures employing the 2D printing technologies. Good structural quality, low layer resistance, and good mechanical strength combined with the ability to obtain a large amount of the graphene powder, and to control the parameters of the synthesized particles make this material promising for various applications and, above all, for sensors and other devices for flexible electronics and the Internet of things ecosystem. |
topic |
DC plasma synthesis graphene flakes quasi-one-dimensional flow composite films electrical properties 2D printing technologies |
url |
https://www.mdpi.com/2079-4991/10/10/2050 |
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