NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler

Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the n...

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Main Authors: Alberto Gola, Fabio Acerbi, Massimo Capasso, Marco Marcante, Alberto Mazzi, Giovanni Paternoster, Claudio Piemonte, Veronica Regazzoni, Nicola Zorzi
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Sensors
Subjects:
PET
Online Access:http://www.mdpi.com/1424-8220/19/2/308
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spelling doaj-bd89303514974dd095f0567e879fbbac2020-11-24T23:05:58ZengMDPI AGSensors1424-82202019-01-0119230810.3390/s19020308s19020308NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno KesslerAlberto Gola0Fabio Acerbi1Massimo Capasso2Marco Marcante3Alberto Mazzi4Giovanni Paternoster5Claudio Piemonte6Veronica Regazzoni7Nicola Zorzi8Fondazione Bruno Kessler, 38123 Trento, ItalyFondazione Bruno Kessler, 38123 Trento, ItalyFondazione Bruno Kessler, 38123 Trento, ItalyFondazione Bruno Kessler, 38123 Trento, ItalyFondazione Bruno Kessler, 38123 Trento, ItalyFondazione Bruno Kessler, 38123 Trento, ItalyBroadcom Inc., 93049 Regensburg, GermanyFondazione Bruno Kessler, 38123 Trento, ItalyFondazione Bruno Kessler, 38123 Trento, ItalyDifferent applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm2. Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD–LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD–Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm2. Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.http://www.mdpi.com/1424-8220/19/2/308silicon photomultiplier (SiPM) technologyscintillation light readoutPETCherenkov light detectioncryogenic SiPMliquid–Argon TPCliquidnoble-gases scintillatorsVUV-light detectionSiPM performance
collection DOAJ
language English
format Article
sources DOAJ
author Alberto Gola
Fabio Acerbi
Massimo Capasso
Marco Marcante
Alberto Mazzi
Giovanni Paternoster
Claudio Piemonte
Veronica Regazzoni
Nicola Zorzi
spellingShingle Alberto Gola
Fabio Acerbi
Massimo Capasso
Marco Marcante
Alberto Mazzi
Giovanni Paternoster
Claudio Piemonte
Veronica Regazzoni
Nicola Zorzi
NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler
Sensors
silicon photomultiplier (SiPM) technology
scintillation light readout
PET
Cherenkov light detection
cryogenic SiPM
liquid–Argon TPC
liquid
noble-gases scintillators
VUV-light detection
SiPM performance
author_facet Alberto Gola
Fabio Acerbi
Massimo Capasso
Marco Marcante
Alberto Mazzi
Giovanni Paternoster
Claudio Piemonte
Veronica Regazzoni
Nicola Zorzi
author_sort Alberto Gola
title NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler
title_short NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler
title_full NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler
title_fullStr NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler
title_full_unstemmed NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler
title_sort nuv-sensitive silicon photomultiplier technologies developed at fondazione bruno kessler
publisher MDPI AG
series Sensors
issn 1424-8220
publishDate 2019-01-01
description Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm2. Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD–LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD–Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm2. Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.
topic silicon photomultiplier (SiPM) technology
scintillation light readout
PET
Cherenkov light detection
cryogenic SiPM
liquid–Argon TPC
liquid
noble-gases scintillators
VUV-light detection
SiPM performance
url http://www.mdpi.com/1424-8220/19/2/308
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