Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The devi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-05-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1424-8220/15/6/12260 |