Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh

Voltage control of magnetism in ferromagnetic semiconductor is appealing for spintronic applications, which is yet hindered by compound formation and low Curie temperature. Here, Nie et al. report electric-field control of ferromagnetism in MnxGe1−xnanomeshes with a Curie temperature above 400 K and...

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Main Authors:	Tianxiao Nie, Jianshi Tang, Xufeng Kou, Yin Gen, Shengwei Lee, Xiaodan Zhu, Qinglin He, Li-Te Chang, Koichi Murata, Yabin Fan, Kang L. Wang
Format:	Article
Language:	English
Published:	Nature Publishing Group 2016-10-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/ncomms12866

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spelling	doaj-bc816fa73027437481344c069fed6e1a2021-05-11T10:50:54ZengNature Publishing GroupNature Communications2041-17232016-10-01711910.1038/ncomms12866Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomeshTianxiao Nie0Jianshi Tang1Xufeng Kou2Yin Gen3Shengwei Lee4Xiaodan Zhu5Qinglin He6Li-Te Chang7Koichi Murata8Yabin Fan9Kang L. Wang10Department of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaInstitute of Materials Science and Engineering, National Central University, 300 Jung-Da Rd, Chung-Li 320Department of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaDepartment of Electrical Engineering, Device Research Laboratory, University of CaliforniaVoltage control of magnetism in ferromagnetic semiconductor is appealing for spintronic applications, which is yet hindered by compound formation and low Curie temperature. Here, Nie et al. report electric-field control of ferromagnetism in MnxGe1−xnanomeshes with a Curie temperature above 400 K and controllable giant magnetoresistance.https://doi.org/10.1038/ncomms12866
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tianxiao Nie Jianshi Tang Xufeng Kou Yin Gen Shengwei Lee Xiaodan Zhu Qinglin He Li-Te Chang Koichi Murata Yabin Fan Kang L. Wang
spellingShingle	Tianxiao Nie Jianshi Tang Xufeng Kou Yin Gen Shengwei Lee Xiaodan Zhu Qinglin He Li-Te Chang Koichi Murata Yabin Fan Kang L. Wang Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh Nature Communications
author_facet	Tianxiao Nie Jianshi Tang Xufeng Kou Yin Gen Shengwei Lee Xiaodan Zhu Qinglin He Li-Te Chang Koichi Murata Yabin Fan Kang L. Wang
author_sort	Tianxiao Nie
title	Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh
title_short	Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh
title_full	Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh
title_fullStr	Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh
title_full_unstemmed	Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh
title_sort	enhancing electric-field control of ferromagnetism through nanoscale engineering of high-tc mnxge1−x nanomesh
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2016-10-01
description	Voltage control of magnetism in ferromagnetic semiconductor is appealing for spintronic applications, which is yet hindered by compound formation and low Curie temperature. Here, Nie et al. report electric-field control of ferromagnetism in MnxGe1−xnanomeshes with a Curie temperature above 400 K and controllable giant magnetoresistance.
url	https://doi.org/10.1038/ncomms12866
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Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh

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