Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh

Voltage control of magnetism in ferromagnetic semiconductor is appealing for spintronic applications, which is yet hindered by compound formation and low Curie temperature. Here, Nie et al. report electric-field control of ferromagnetism in MnxGe1−xnanomeshes with a Curie temperature above 400 K and...

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Bibliographic Details
Main Authors: Tianxiao Nie, Jianshi Tang, Xufeng Kou, Yin Gen, Shengwei Lee, Xiaodan Zhu, Qinglin He, Li-Te Chang, Koichi Murata, Yabin Fan, Kang L. Wang
Format: Article
Language:English
Published: Nature Publishing Group 2016-10-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms12866
Description
Summary:Voltage control of magnetism in ferromagnetic semiconductor is appealing for spintronic applications, which is yet hindered by compound formation and low Curie temperature. Here, Nie et al. report electric-field control of ferromagnetism in MnxGe1−xnanomeshes with a Curie temperature above 400 K and controllable giant magnetoresistance.
ISSN:2041-1723