Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

<b> </b>In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effe...

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Bibliographic Details
Main Authors: Mariem Naffeti, Pablo Aitor Postigo, Radhouane Chtourou, Mohamed Ali Zaïbi
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Nanomaterials
Subjects:
silicon nanowires
metal assisted chemical etching
etching time
optical properties
electrical properties
Online Access:https://www.mdpi.com/2079-4991/10/3/404

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