Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit
The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2017-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2017/2543917 |