Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al. develop a surface-diffusion model to describe lifetime of filaments ranging from microseconds to year...

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Main Authors:	Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini
Format:	Article
Language:	English
Published:	Nature Publishing Group 2019-01-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-018-07979-0

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spelling	doaj-bb61f6f7fd6e454bbaaca9088c9120c82021-05-11T12:23:09ZengNature Publishing GroupNature Communications2041-17232019-01-011011910.1038/s41467-018-07979-0Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devicesWei Wang0Ming Wang1Elia Ambrosi2Alessandro Bricalli3Mario Laudato4Zhong Sun5Xiaodong Chen6Daniele Ielmini7Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IUNET, Piazza L. da VinciInnovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological UniversityDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IUNET, Piazza L. da VinciDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IUNET, Piazza L. da VinciDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IUNET, Piazza L. da VinciDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IUNET, Piazza L. da VinciInnovative Centre for Flexible Devices (iFLEX), School of Materials Science and Engineering, Nanyang Technological UniversityDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IUNET, Piazza L. da VinciResistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al. develop a surface-diffusion model to describe lifetime of filaments ranging from microseconds to years.https://doi.org/10.1038/s41467-018-07979-0
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Wei Wang Ming Wang Elia Ambrosi Alessandro Bricalli Mario Laudato Zhong Sun Xiaodong Chen Daniele Ielmini
spellingShingle	Wei Wang Ming Wang Elia Ambrosi Alessandro Bricalli Mario Laudato Zhong Sun Xiaodong Chen Daniele Ielmini Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices Nature Communications
author_facet	Wei Wang Ming Wang Elia Ambrosi Alessandro Bricalli Mario Laudato Zhong Sun Xiaodong Chen Daniele Ielmini
author_sort	Wei Wang
title	Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
title_short	Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
title_full	Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
title_fullStr	Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
title_full_unstemmed	Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
title_sort	surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2019-01-01
description	Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al. develop a surface-diffusion model to describe lifetime of filaments ranging from microseconds to years.
url	https://doi.org/10.1038/s41467-018-07979-0
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Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

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