An Insight Into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs

An Insight Into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs

Silicon-Nanotube-based ultra-thin DGAA MOSFETs have been extensively studied for their superior immunity to short channel effects (SCEs) and better drive current capability; however, the reliability issues owing to self-heating effects (SHEs) and hot carrier injection (HCI) degradation are yet to be...

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Bibliographic Details
Main Authors: Arun Kumar, P. S. T. N. Srinivas, Pramod Kumar Tiwari
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
DGAA MOSFETs
silicon-nanotube
HCI
SHE
gate leakage current
negative-differential-conductance (NDC)
Online Access:https://ieeexplore.ieee.org/document/8869879/

Internet

https://ieeexplore.ieee.org/document/8869879/

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