p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were char...

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Main Authors: Daiki Itohara, Kazato Shinohara, Toshiyuki Yoshida, Yasuhisa Fujita
Format: Article
Language:English
Published: Hindawi Limited 2016-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2016/8219326
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spelling doaj-ba8532e08c5a434a810d3bb01891cff52020-11-24T23:49:35ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292016-01-01201610.1155/2016/82193268219326p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle LayersDaiki Itohara0Kazato Shinohara1Toshiyuki Yoshida2Yasuhisa Fujita3Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsucho, Matsue 690-8504, JapanInterdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsucho, Matsue 690-8504, JapanInterdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsucho, Matsue 690-8504, JapanInterdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsucho, Matsue 690-8504, JapanBoth n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.http://dx.doi.org/10.1155/2016/8219326
collection DOAJ
language English
format Article
sources DOAJ
author Daiki Itohara
Kazato Shinohara
Toshiyuki Yoshida
Yasuhisa Fujita
spellingShingle Daiki Itohara
Kazato Shinohara
Toshiyuki Yoshida
Yasuhisa Fujita
p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers
Journal of Nanomaterials
author_facet Daiki Itohara
Kazato Shinohara
Toshiyuki Yoshida
Yasuhisa Fujita
author_sort Daiki Itohara
title p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers
title_short p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers
title_full p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers
title_fullStr p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers
title_full_unstemmed p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers
title_sort p-channel and n-channel thin-film-transistor operation on sprayed zno nanoparticle layers
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2016-01-01
description Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.
url http://dx.doi.org/10.1155/2016/8219326
work_keys_str_mv AT daikiitohara pchannelandnchannelthinfilmtransistoroperationonsprayedznonanoparticlelayers
AT kazatoshinohara pchannelandnchannelthinfilmtransistoroperationonsprayedznonanoparticlelayers
AT toshiyukiyoshida pchannelandnchannelthinfilmtransistoroperationonsprayedznonanoparticlelayers
AT yasuhisafujita pchannelandnchannelthinfilmtransistoroperationonsprayedznonanoparticlelayers
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