Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasm...

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Main Authors: J. Upadhyay, A. Palczewski, S. Popović, A.-M. Valente-Feliciano, Do Im, H. L. Phillips, L. Vušković
Format: Article
Language:English
Published: AIP Publishing LLC 2017-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4991888
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spelling doaj-ba760bb81da04783ae9362d87cce2a852020-11-24T23:33:51ZengAIP Publishing LLCAIP Advances2158-32262017-12-01712125016125016-510.1063/1.4991888034712ADVCryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasmaJ. Upadhyay0A. Palczewski1S. Popović2A.-M. Valente-Feliciano3Do Im4H. L. Phillips5L. Vušković6Department of Physics and Center for Accelerator Science, Old Dominion University, Norfolk, VA 23529, USAThomas Jefferson National Accelerator Facility, Newport News, VA 23606, USADepartment of Physics and Center for Accelerator Science, Old Dominion University, Norfolk, VA 23529, USAThomas Jefferson National Accelerator Facility, Newport News, VA 23606, USADepartment of Physics and Center for Accelerator Science, Old Dominion University, Norfolk, VA 23529, USAThomas Jefferson National Accelerator Facility, Newport News, VA 23606, USADepartment of Physics and Center for Accelerator Science, Old Dominion University, Norfolk, VA 23529, USAAn apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.http://dx.doi.org/10.1063/1.4991888
collection DOAJ
language English
format Article
sources DOAJ
author J. Upadhyay
A. Palczewski
S. Popović
A.-M. Valente-Feliciano
Do Im
H. L. Phillips
L. Vušković
spellingShingle J. Upadhyay
A. Palczewski
S. Popović
A.-M. Valente-Feliciano
Do Im
H. L. Phillips
L. Vušković
Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma
AIP Advances
author_facet J. Upadhyay
A. Palczewski
S. Popović
A.-M. Valente-Feliciano
Do Im
H. L. Phillips
L. Vušković
author_sort J. Upadhyay
title Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma
title_short Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma
title_full Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma
title_fullStr Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma
title_full_unstemmed Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma
title_sort cryogenic rf test of the first srf cavity etched in an rf ar/cl2 plasma
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-12-01
description An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.
url http://dx.doi.org/10.1063/1.4991888
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