Multilayered PdSe2/Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application

• Main Authors: Long‐Hui Zeng, Qing‐Ming Chen, Zhi‐Xiang Zhang, Di Wu, Huiyu Yuan, Yan‐Yong Li, Wayesh Qarony, Shu Ping Lau, Lin‐Bao Luo, Yuen Hong Tsang
• Format: Article
• Language: English
• Published: Wiley 2019-10-01
• Series: Advanced Science
• Subjects: image sensors; palladium diselenide; perovskites; photodetectors; polarization‐sensitive
• Online Access: https://doi.org/10.1002/advs.201901134

Abstract Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA1−xCsxPbI3 perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈104, a high responsivity (R) of 313 mA W−1, a decent specific detectivity (D*) of ≈1013 Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe2/perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe2/perovskite detector can readily record five “P,” “O,” “L,” “Y,” and “U” images sequentially produced by 808 nm. These results suggest that the present PdSe2/perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future.