Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
<p>Abstract</p> <p>In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al<sub>2</sub>O<sub>3</sub>-based gate stack, after a thermal annealing process, affects the varia...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/108 |
| Summary: | <p>Abstract</p> <p>In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al<sub>2</sub>O<sub>3</sub>-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al<sub>2</sub>O<sub>3 </sub>layers have been also analyzed.</p> |
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| ISSN: | 1931-7573 1556-276X |