Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon
Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al0.2Ga0.8N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which min...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4921757 |