The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon
Porous silicon (por-Si) has a unique combination of physicochemical parameters: well-developed surface and hence high sorption. Depending on technology it is possible to form nanometer size pores and clusters in porous silicon which makes this material promising for developments in the field of opto...
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doaj-b9672f8796254fbc9040e4913366e05f2021-04-02T05:31:34ZengPensoft PublishersModern Electronic Materials2452-17792016-12-012412713010.1016/j.moem.2017.02.001The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous siliconVladimir M. Kashkarov0Aleksandr S. Lenshin1Pavel V. Seredin2Dmitriy A. Minakov3Boris L. Agapov4Vladimir N. Tsipenyuk5Voronezh State University, 1 Universitetskaya Sq., Voronezh 394018, RussiaVoronezh State University, 1 Universitetskaya Sq., Voronezh 394018, RussiaVoronezh State University, 1 Universitetskaya Sq., Voronezh 394018, RussiaAir Force Academy named after Prof. N. E. Zhukovsky and Yu. A. Gagarin, 54А Starykh Bolshevikov Str., Voronezh 394064, RussiaVoronezh State University, 1 Universitetskaya Sq., Voronezh 394018, RussiaVoronezh State University, 1 Universitetskaya Sq., Voronezh 394018, RussiaPorous silicon (por-Si) has a unique combination of physicochemical parameters: well-developed surface and hence high sorption. Depending on technology it is possible to form nanometer size pores and clusters in porous silicon which makes this material promising for developments in the field of optoelectronics and sensors. However the high surface activity makes por-Si unstable when exposed to atmosphere. In this work we have studied the effect of por-Si surface treatment in a polyacrylic acid water solution on the composition and photoluminescence (PL) of the material. Por-Si was produced from two fluoric acid solutions. One was a standard solution of fluoric acid, isopropyl alcohol and hydrogen peroxide, and the other was a mixture of fluoric acid and dimethylformamide. We have shown that depending on por-Si technology, its treatment in polyacrylic acid solution allows increasing and stabilizing por-Si PL or changing PL band position and significantly increasing its integral intensity.http://www.sciencedirect.com/science/article/pii/S2452177917300166Porous siliconNanomaterialsElectron structurePhotoluminescence |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Vladimir M. Kashkarov Aleksandr S. Lenshin Pavel V. Seredin Dmitriy A. Minakov Boris L. Agapov Vladimir N. Tsipenyuk |
spellingShingle |
Vladimir M. Kashkarov Aleksandr S. Lenshin Pavel V. Seredin Dmitriy A. Minakov Boris L. Agapov Vladimir N. Tsipenyuk The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon Modern Electronic Materials Porous silicon Nanomaterials Electron structure Photoluminescence |
author_facet |
Vladimir M. Kashkarov Aleksandr S. Lenshin Pavel V. Seredin Dmitriy A. Minakov Boris L. Agapov Vladimir N. Tsipenyuk |
author_sort |
Vladimir M. Kashkarov |
title |
The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon |
title_short |
The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon |
title_full |
The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon |
title_fullStr |
The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon |
title_full_unstemmed |
The effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon |
title_sort |
effect of surface treatment in polyacrylic acid solution on the photoluminescent properties of porous silicon |
publisher |
Pensoft Publishers |
series |
Modern Electronic Materials |
issn |
2452-1779 |
publishDate |
2016-12-01 |
description |
Porous silicon (por-Si) has a unique combination of physicochemical parameters: well-developed surface and hence high sorption. Depending on technology it is possible to form nanometer size pores and clusters in porous silicon which makes this material promising for developments in the field of optoelectronics and sensors. However the high surface activity makes por-Si unstable when exposed to atmosphere.
In this work we have studied the effect of por-Si surface treatment in a polyacrylic acid water solution on the composition and photoluminescence (PL) of the material. Por-Si was produced from two fluoric acid solutions. One was a standard solution of fluoric acid, isopropyl alcohol and hydrogen peroxide, and the other was a mixture of fluoric acid and dimethylformamide. We have shown that depending on por-Si technology, its treatment in polyacrylic acid solution allows increasing and stabilizing por-Si PL or changing PL band position and significantly increasing its integral intensity. |
topic |
Porous silicon Nanomaterials Electron structure Photoluminescence |
url |
http://www.sciencedirect.com/science/article/pii/S2452177917300166 |
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