Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV

Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV

This study systematically investigates the properties of (i) conductive Si-doped α-(AlxGa1−x)2O3 thin films grown via a third generation mist chemical vapor deposition system and (ii) Schottky diodes (SDs) and metal semiconductor field-effect transistors (MESFETs) fabricated on them. The use of chlo...

Full description

Bibliographic Details
Main Authors: Giang T. Dang, Yuki Tagashira, Tatsuya Yasuoka, Li Liu, Toshiyuki Kawaharamura
Format: Article
Language:English
Published: AIP Publishing LLC 2020-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0026095

Internet

http://dx.doi.org/10.1063/5.0026095

Similar Items