Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

The effect of piezoelectric polarization on GaN-based light emitting diodes (LEDs) with different kinds of prestrain layers between the multiple quantum wells (MQWs) and n-GaN layer is studied and demonstrated. Compared with the conventional LED, more than 10% enhancement in the output power of the...

Full description

Bibliographic Details
Main Authors:	C. K. Wang, Y. Z. Chiou, T. H. Chiang, T. K. Lin
Format:	Article
Language:	English
Published:	Hindawi Limited 2015-01-01
Series:	International Journal of Photoenergy
Online Access:	http://dx.doi.org/10.1155/2015/135321

Similar Items

Characteristics of GaN-Based LEDs With MQW Prestrain Layers and Si-Doped Quantum Barriers
by: Cheng-TeLin, et al.
Published: (2010)

Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale
by: Stefan Wolter, et al.
Published: (2021-03-01)

Carrier transport study of Ga-polar, N-polar, and semipolar InGaN/GaN multiple quantum well LEDs by using quantum efficiency and time-resolved electroluminescence measurements
by: Po-Hsun Liao, et al.
Published: (2013)

AlN Buffer Layer Application of the GaN LED
by: Yung Yu Fan Chiang, et al.
Published: (2010)

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
by: Marco Calciati, et al.
Published: (2014-06-01)

ELECTROLUMINESCENT DEVICES FABRICATED ON ERBIUM DOPED GaN
by: GARTER, MICHAEL JAMES
Published: (2001)

Analysis of the InGaN ∕ GaN LED With an InGaN ∕ GaN pre-buffer layer
by: Po-Yi Hou, et al.
Published: (2008)

High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers
by: Ya-Fen Wu
Published: (2012-01-01)

Carrier screening and piezoelectric effects on optical performance of GaN-based LED
by: Yi-chin Lin, et al.
Published: (2015)

Growth of superlattice structure on p-layer in GaN-LED
by: Sheng-Hsien Yen, et al.
Published: (2016)

Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics
by: Guoshuai Qin, et al.
Published: (2018-10-01)

Heat flow and Junction Temperature study in GaN LEDs
by: Y.W.Chen, et al.
Published: (2007)

Un-doped layer thickness on the optical properties of GaN LED
by: Hung -Yang Huang, et al.
Published: (2010)

Growth and Mechanisms for Rare-Earth-Doped GaN Electroluminescent Devices (ELDs)
by: Lee, Dong-Seon
Published: (2002)

Electroluminescence properties of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes
by: Tzung-Shian Yang, et al.
Published: (2009)

Improvement of the Characteristics of InGaN/GaN MQW LED with Current Blocking Layer
by: Chia-Hung Tsai, et al.
Published: (2005)

Simulation of the light extraction efficiency of GaN LEDs
by: CHIANG,CHIH-YIN, et al.
Published: (2017)

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes
by: Kai-Chiang Hsu, et al.
Published: (2015-11-01)

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature-and Pressure-Dependent Study of Polar and Non-Polar Structures
by: Kaminska, A., et al.
Published: (2022)

Temperature dependent electroluminescence of high performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes
by: Ying-Yuan Huang, et al.
Published: (2010)

InGaN/GaN quantum-well light-emitting diodes with a reversed piezoelectric polarization field
by: Meng-Jie Lee, et al.
Published: (2013)

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs
by: Anna Reszka, et al.
Published: (2021-12-01)

Study of Electroluminescence Spectra in InGaN/GaN Multiple-quantum-well Light-emitting Diodes
by: Yi-Ping Wang, et al.
Published: (2008)

Study on the Optical and Electrical Properties of Transparent Conductive Layer for GaN LEDs
by: 紀成翰
Published: (2017)

Theoretical studies on semiconductor electroluminescent refrigerators and GaN-based light-emitting diodes
by: Lee, Kuan-Chen, et al.
Published: (2014)

Optoelectronic study of InGaN/GaN LEDs
by: Wallace, Michael
Published: (2016)

Effects of prestrain on fracture
by: Groom, J. D. G.
Published: (1971)

Single-chip white LED by using GaN blue LED with photon-energy-conversion layer
by: Jen-Hao Chen, et al.
Published: (2011)

Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
by: Dong Liu, et al.
Published: (2019-08-01)

Polarization-dependent photoluminescence studies of InGaN/GaN multiple quantum wells
by: Meng-Lin Chang, et al.
Published: (2002)

Fabrication and analysis of GaN micro LED
by: Kuan-Feng Lee, et al.
Published: (2005)

Study the Application of DBR in GaN LEDs
by: Y.C.Lin, et al.
Published: (2010)

Investigation on the improvement of GaN based LEDs
by: Jia-Ming Cao, et al.
Published: (2010)

The research of process about GaN LED
by: Kuei-Hsueh Pan, et al.
Published: (2000)

The Improvement of GaN LED light extraction
by: Huang, Chuan Lee, et al.
Published: (2011)

Investigating Morphology Transformation of Nanoporous GaN Template and Applications on GaN-Based LEDs
by: ZheLi, et al.
Published: (2013)

Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition.
by: Yu-siang You, et al.
Published: (2015)

Structural and optical characterisations of defects in non-polar and semi-polar GaN epilayers and InGaN/GaN MQWs
by: Hao, Rui
Published: (2012)

Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators
by: Weinstein, Dana, et al.
Published: (2014)

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
by: Sadaf JR, et al.
Published: (2010-01-01)