Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity

Abstract In this paper, the structural, electronic, and optical properties of MoS2 multilayers are investigated by employing the first-principles method. Up to six-layers of MoS2 have been comparatively studied. The covalency and ionicity in the MoS2 monolayer are shown to be stronger than those in...

Full description

Bibliographic Details
Main Authors: Jia-Qi Hu, Xiao-Hong Shi, Shun-Qing Wu, Kai-Ming Ho, Zi-Zhong Zhu
Format: Article
Language:English
Published: SpringerOpen 2019-08-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://link.springer.com/article/10.1186/s11671-019-3105-9
id doaj-b88161411518408e8c5c4db88557bebb
record_format Article
spelling doaj-b88161411518408e8c5c4db88557bebb2020-11-25T03:37:48ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-08-0114111310.1186/s11671-019-3105-9Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove SingularityJia-Qi Hu0Xiao-Hong Shi1Shun-Qing Wu2Kai-Ming Ho3Zi-Zhong Zhu4Department of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen UniversityDepartment of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen UniversityDepartment of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen UniversityInternational Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of ChinaDepartment of Physics, OSED, Key Laboratory of Low Dimensional Condensed Matter Physics (Department of Education of Fujian Province), Jiujiang Research Institute, Xiamen UniversityAbstract In this paper, the structural, electronic, and optical properties of MoS2 multilayers are investigated by employing the first-principles method. Up to six-layers of MoS2 have been comparatively studied. The covalency and ionicity in the MoS2 monolayer are shown to be stronger than those in the bulk. As the layer number is increased to two or above two, band splitting is significant due to the interlayer coupling. We found that long plateaus emerged in the imaginary parts of the dielectric function ε2xxω $$ {\varepsilon}_2^{xx}\left(\omega \right) $$ and the joint density of states (JDOS) of MoS2 multilayers, due to the Van Hove singularities in a two-dimensional material. One, two and three small steps appear at the thresholds of both the long plateau of ε2xxω $$ {\varepsilon}_2^{xx}\left(\omega \right) $$ and JDOS, for monolayer, bilayer, and trilayer, respectively. As the number of layers further increased, the number of small steps increases and the width of the small steps decreases accordingly. Due to interlayer coupling, the longest plateau and shortest plateau of JDOS are from the monolayer and bulk, respectively.http://link.springer.com/article/10.1186/s11671-019-3105-9MoS2 multilayersElectronic propertiesOptical propertiesVan Hove singularities
collection DOAJ
language English
format Article
sources DOAJ
author Jia-Qi Hu
Xiao-Hong Shi
Shun-Qing Wu
Kai-Ming Ho
Zi-Zhong Zhu
spellingShingle Jia-Qi Hu
Xiao-Hong Shi
Shun-Qing Wu
Kai-Ming Ho
Zi-Zhong Zhu
Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity
Nanoscale Research Letters
MoS2 multilayers
Electronic properties
Optical properties
Van Hove singularities
author_facet Jia-Qi Hu
Xiao-Hong Shi
Shun-Qing Wu
Kai-Ming Ho
Zi-Zhong Zhu
author_sort Jia-Qi Hu
title Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity
title_short Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity
title_full Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity
title_fullStr Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity
title_full_unstemmed Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity
title_sort dependence of electronic and optical properties of mos2 multilayers on the interlayer coupling and van hove singularity
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2019-08-01
description Abstract In this paper, the structural, electronic, and optical properties of MoS2 multilayers are investigated by employing the first-principles method. Up to six-layers of MoS2 have been comparatively studied. The covalency and ionicity in the MoS2 monolayer are shown to be stronger than those in the bulk. As the layer number is increased to two or above two, band splitting is significant due to the interlayer coupling. We found that long plateaus emerged in the imaginary parts of the dielectric function ε2xxω $$ {\varepsilon}_2^{xx}\left(\omega \right) $$ and the joint density of states (JDOS) of MoS2 multilayers, due to the Van Hove singularities in a two-dimensional material. One, two and three small steps appear at the thresholds of both the long plateau of ε2xxω $$ {\varepsilon}_2^{xx}\left(\omega \right) $$ and JDOS, for monolayer, bilayer, and trilayer, respectively. As the number of layers further increased, the number of small steps increases and the width of the small steps decreases accordingly. Due to interlayer coupling, the longest plateau and shortest plateau of JDOS are from the monolayer and bulk, respectively.
topic MoS2 multilayers
Electronic properties
Optical properties
Van Hove singularities
url http://link.springer.com/article/10.1186/s11671-019-3105-9
work_keys_str_mv AT jiaqihu dependenceofelectronicandopticalpropertiesofmos2multilayersontheinterlayercouplingandvanhovesingularity
AT xiaohongshi dependenceofelectronicandopticalpropertiesofmos2multilayersontheinterlayercouplingandvanhovesingularity
AT shunqingwu dependenceofelectronicandopticalpropertiesofmos2multilayersontheinterlayercouplingandvanhovesingularity
AT kaimingho dependenceofelectronicandopticalpropertiesofmos2multilayersontheinterlayercouplingandvanhovesingularity
AT zizhongzhu dependenceofelectronicandopticalpropertiesofmos2multilayersontheinterlayercouplingandvanhovesingularity
_version_ 1724543797842411520