Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM Characteristic
This paper proposes a novel inter-stage load-pull characterization method to enhance the linearity of millimeter wave integrated power amplifiers (PAs) by minimizing their amplitude-to-phase (AM-PM) distortion without worsening their AM-AM or efficiency performances. The proposed method identifies t...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
|
Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8951102/ |
id |
doaj-b83fd66157164c1ea2559e137cb29b6f |
---|---|
record_format |
Article |
spelling |
doaj-b83fd66157164c1ea2559e137cb29b6f2021-03-30T01:18:04ZengIEEEIEEE Access2169-35362020-01-0188861887510.1109/ACCESS.2020.29646708951102Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM CharacteristicJingjing Xia0Xiaohu Fang1https://orcid.org/0000-0002-3416-624XAhmed Ben Ayed2Slim Boumaiza3Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, CanadaDepartment of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, CanadaDepartment of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, CanadaDepartment of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, CanadaThis paper proposes a novel inter-stage load-pull characterization method to enhance the linearity of millimeter wave integrated power amplifiers (PAs) by minimizing their amplitude-to-phase (AM-PM) distortion without worsening their AM-AM or efficiency performances. The proposed method identifies the optimal solution for the inter-stage matching network which enables the synthesis of a driver stage AM-PM characteristic that is complementary to that of the power stage; consequently, reducing the overall AM-PM distortion of the PA. The proposed technique is applied to design a proof-of-concept 28-31 GHz PA demonstrator using 45 nm silicon-on-insulator CMOS technology. The measurement results obtained under continuous wave excitation at 29 GHz demonstrate an excellent AM-PM characteristic, with phase distortions as low as 0.2° at the 1-dB compression power level of 13.9 dBm and less than 1° at an output power level of up to 16 dBm (very close to the saturation power of 16.6 dBm). This enhanced AM-PM linearity improves the linearizability of the PA. This was confirmed by testing the PA with a 64 quadrature amplitude modulated test signal with an instantaneous bandwidth of 800 MHz. Without applying any digital pre-distortion (DPD) technique, the PA delivers a power added efficiency (PAE) of 8.7% at an average output power (Pavg) of 9.4 dBm while maintaining an error vector magnitude (EVM) of -25 dB. However, after applying a very simple memoryless DPD function with only four coefficients, the PA can operate at a higher Pavg of 11.1 dBm with a much better PAE of 12.2% while still maintaining an acceptable EVM of -25.2 dB. Thanks to the proposed technique, the PAE of the proposed PA can be improved by 40% with a very simple application of a low cost and low complexity DPD technique.https://ieeexplore.ieee.org/document/8951102/45 nm SOI-CMOSAM-PM distortionEVMmillimeter wave power amplifierwideband modulated signal |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jingjing Xia Xiaohu Fang Ahmed Ben Ayed Slim Boumaiza |
spellingShingle |
Jingjing Xia Xiaohu Fang Ahmed Ben Ayed Slim Boumaiza Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM Characteristic IEEE Access 45 nm SOI-CMOS AM-PM distortion EVM millimeter wave power amplifier wideband modulated signal |
author_facet |
Jingjing Xia Xiaohu Fang Ahmed Ben Ayed Slim Boumaiza |
author_sort |
Jingjing Xia |
title |
Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM Characteristic |
title_short |
Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM Characteristic |
title_full |
Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM Characteristic |
title_fullStr |
Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM Characteristic |
title_full_unstemmed |
Millimeter Wave SOI-CMOS Power Amplifier With Enhanced AM-PM Characteristic |
title_sort |
millimeter wave soi-cmos power amplifier with enhanced am-pm characteristic |
publisher |
IEEE |
series |
IEEE Access |
issn |
2169-3536 |
publishDate |
2020-01-01 |
description |
This paper proposes a novel inter-stage load-pull characterization method to enhance the linearity of millimeter wave integrated power amplifiers (PAs) by minimizing their amplitude-to-phase (AM-PM) distortion without worsening their AM-AM or efficiency performances. The proposed method identifies the optimal solution for the inter-stage matching network which enables the synthesis of a driver stage AM-PM characteristic that is complementary to that of the power stage; consequently, reducing the overall AM-PM distortion of the PA. The proposed technique is applied to design a proof-of-concept 28-31 GHz PA demonstrator using 45 nm silicon-on-insulator CMOS technology. The measurement results obtained under continuous wave excitation at 29 GHz demonstrate an excellent AM-PM characteristic, with phase distortions as low as 0.2° at the 1-dB compression power level of 13.9 dBm and less than 1° at an output power level of up to 16 dBm (very close to the saturation power of 16.6 dBm). This enhanced AM-PM linearity improves the linearizability of the PA. This was confirmed by testing the PA with a 64 quadrature amplitude modulated test signal with an instantaneous bandwidth of 800 MHz. Without applying any digital pre-distortion (DPD) technique, the PA delivers a power added efficiency (PAE) of 8.7% at an average output power (Pavg) of 9.4 dBm while maintaining an error vector magnitude (EVM) of -25 dB. However, after applying a very simple memoryless DPD function with only four coefficients, the PA can operate at a higher Pavg of 11.1 dBm with a much better PAE of 12.2% while still maintaining an acceptable EVM of -25.2 dB. Thanks to the proposed technique, the PAE of the proposed PA can be improved by 40% with a very simple application of a low cost and low complexity DPD technique. |
topic |
45 nm SOI-CMOS AM-PM distortion EVM millimeter wave power amplifier wideband modulated signal |
url |
https://ieeexplore.ieee.org/document/8951102/ |
work_keys_str_mv |
AT jingjingxia millimeterwavesoicmospoweramplifierwithenhancedampmcharacteristic AT xiaohufang millimeterwavesoicmospoweramplifierwithenhancedampmcharacteristic AT ahmedbenayed millimeterwavesoicmospoweramplifierwithenhancedampmcharacteristic AT slimboumaiza millimeterwavesoicmospoweramplifierwithenhancedampmcharacteristic |
_version_ |
1724187284790575104 |