Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition
Graphene, known as an alternative for silicon, has significant potential in microelectronic applications. The assembly of graphene on well-defined metal electrodes is a critical step in the fabrication of microelectronic devices. Herein, we present a convenient, rapid, and large-scale assembly metho...
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MDPI AG
2018-06-01
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| Online Access: | http://www.mdpi.com/2073-4352/8/6/239 |
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doaj-b83700ba139e43c2bc0735c1ab825a222020-11-25T01:41:03ZengMDPI AGCrystals2073-43522018-06-018623910.3390/cryst8060239cryst8060239Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced ElectrodepositionYu Zhang0Yong Yang1Na Liu2Fanhua Yu3Haibo Yu4Niandong Jiao5Department of Computer Science and Technology, Changchun Normal University, Changchun 130032, ChinaDepartment of Computer Science and Technology, Changchun Normal University, Changchun 130032, ChinaSchool of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200444, ChinaDepartment of Computer Science and Technology, Changchun Normal University, Changchun 130032, ChinaState Key Laboratory of Robotics, Shenyang Institute of Automation Chinese Academy of Sciences, Shenyang 110016, ChinaState Key Laboratory of Robotics, Shenyang Institute of Automation Chinese Academy of Sciences, Shenyang 110016, ChinaGraphene, known as an alternative for silicon, has significant potential in microelectronic applications. The assembly of graphene on well-defined metal electrodes is a critical step in the fabrication of microelectronic devices. Herein, we present a convenient, rapid, and large-scale assembly method for deposition of Ag electrodes, namely optically induced electrodeposition (OIED). This technique enables us to achieve custom-designed and mask-free fabrication of graphene transistors. The entire assembly process can be completed within a few tens of seconds. Our results show that graphene-based transistors fabricated with Ag electrodes function as a p-type semiconductor. Transfer curves of different samples reveal similar trends of slightly p-type characteristics, which shows that this method is reliable and repeatable.http://www.mdpi.com/2073-4352/8/6/239graphene transistorslarge-scale assemblymask-free fabricationoptically induced electrodeposition |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Yu Zhang Yong Yang Na Liu Fanhua Yu Haibo Yu Niandong Jiao |
| spellingShingle |
Yu Zhang Yong Yang Na Liu Fanhua Yu Haibo Yu Niandong Jiao Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition Crystals graphene transistors large-scale assembly mask-free fabrication optically induced electrodeposition |
| author_facet |
Yu Zhang Yong Yang Na Liu Fanhua Yu Haibo Yu Niandong Jiao |
| author_sort |
Yu Zhang |
| title |
Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition |
| title_short |
Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition |
| title_full |
Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition |
| title_fullStr |
Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition |
| title_full_unstemmed |
Large-Scale Assembly and Mask-Free Fabrication of Graphene Transistors via Optically Induced Electrodeposition |
| title_sort |
large-scale assembly and mask-free fabrication of graphene transistors via optically induced electrodeposition |
| publisher |
MDPI AG |
| series |
Crystals |
| issn |
2073-4352 |
| publishDate |
2018-06-01 |
| description |
Graphene, known as an alternative for silicon, has significant potential in microelectronic applications. The assembly of graphene on well-defined metal electrodes is a critical step in the fabrication of microelectronic devices. Herein, we present a convenient, rapid, and large-scale assembly method for deposition of Ag electrodes, namely optically induced electrodeposition (OIED). This technique enables us to achieve custom-designed and mask-free fabrication of graphene transistors. The entire assembly process can be completed within a few tens of seconds. Our results show that graphene-based transistors fabricated with Ag electrodes function as a p-type semiconductor. Transfer curves of different samples reveal similar trends of slightly p-type characteristics, which shows that this method is reliable and repeatable. |
| topic |
graphene transistors large-scale assembly mask-free fabrication optically induced electrodeposition |
| url |
http://www.mdpi.com/2073-4352/8/6/239 |
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