Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation

Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation

The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induce...

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Bibliographic Details
Main Author: Baghdad Science Journal
Format: Article
Language:Arabic
Published: College of Science for Women, University of Baghdad 2009-09-01
Series:Baghdad Science Journal
Subjects:
"Nuclear radiation , Band gap energy, SiC thin film"
Online Access:http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018
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spelling doaj-b772e44111df41e1b4340ec641acd7a42020-11-25T00:33:30ZaraCollege of Science for Women, University of BaghdadBaghdad Science Journal2078-86652411-79862009-09-016310.21123/bsj.6.3.578-583Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear RadiationBaghdad Science JournalThe effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source. TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussed http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018"Nuclear radiation , Band gap energy, SiC thin film"
collection DOAJ
language Arabic
format Article
sources DOAJ
author Baghdad Science Journal
spellingShingle Baghdad Science Journal
Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
Baghdad Science Journal
"Nuclear radiation , Band gap energy, SiC thin film"
author_facet Baghdad Science Journal
author_sort Baghdad Science Journal
title Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_short Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_full Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_fullStr Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_full_unstemmed Band Gap Energy for SiC Thin Films Prepared By TEACO2 Laser Irradiated With Nuclear Radiation
title_sort band gap energy for sic thin films prepared by teaco2 laser irradiated with nuclear radiation
publisher College of Science for Women, University of Baghdad
series Baghdad Science Journal
issn 2078-8665
2411-7986
publishDate 2009-09-01
description The effect of high energy radiation on the energy gap of compound semiconductor Silicon Carbide (SiC) are viewed. Emphasis is placed on those effects which can be interpreted in terms of energy levels. The goal is to develop semiconductors operating at high temperature with low energy gaps by induced permanent damage in SiC irradiated by gamma source. TEACO2 laser used for producing SiC thin films. Spectrophotometer lambda - UV, Visible instrument is used to determine energy gap (Eg). Co-60, Cs-137, and Sr-90 are used to irradiate SiC samples for different time of irradiation. Possible interpretation of the changing in Eg values as the time of irradiation change is discussed
topic "Nuclear radiation , Band gap energy, SiC thin film"
url http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1018
work_keys_str_mv AT baghdadsciencejournal bandgapenergyforsicthinfilmspreparedbyteaco2laserirradiatedwithnuclearradiation
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