MOS-FET as a Current Sensor in Power Electronics Converters
This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage measurement. In practice, shunt resistors and Hall e...
Main Authors: | Rok Pajer, Miro Milanoviĉ, Branko Premzel, Miran Rodiĉ |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2015-07-01
|
Series: | Sensors |
Subjects: | |
Online Access: | http://www.mdpi.com/1424-8220/15/8/18061 |
Similar Items
-
Operation Mechanism of a MoS2/BP Heterojunction FET
by: Sung Kwan Lim, et al.
Published: (2018-10-01) -
Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS<sub>2</sub> Double-Gate FETs
by: Michael A. Rodder, et al.
Published: (2021-01-01) -
Digital Control of an Interleaving Operated Buck-Boost Synchronous Converter Used in a Low-Cost Testing System for an Automotive Powertrain
by: Miran Rodič, et al.
Published: (2018-08-01) -
Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors
by: Deng Tao, et al.
Published: (2020-10-01) -
Control of a Multiphase Buck Converter, Based on Sliding Mode and Disturbance Estimation, Capable of Linear Large Signal Operation
by: Rok Pajer, et al.
Published: (2019-07-01)