Controllable Electrically Guided Nano-Al/MoO<sub>3</sub> Energetic-Film Formation on a Semiconductor Bridge with High Reactivity and Combustion Performance

Film-forming techniques and the control of heat release in micro-energetic chips or devices create challenges and bottlenecks for the utilization of energy. In this study, promising nano-Al/MoO<sub>3</sub> metastable intermolecular composite (MIC) chips with an uniform distribution of pa...

Full description

Bibliographic Details
Main Authors: Xiaogang Guo, Qi Sun, Taotao Liang, A. S. Giwa
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/5/955
Description
Summary:Film-forming techniques and the control of heat release in micro-energetic chips or devices create challenges and bottlenecks for the utilization of energy. In this study, promising nano-Al/MoO<sub>3</sub> metastable intermolecular composite (MIC) chips with an uniform distribution of particles were firstly designed via a convenient and high-efficiency electrophoretic deposition (EPD) technique at room temperature and under ambient pressure conditions. The mixture of isopropanol, polyethyleneimine, and benzoic acid proved to be an optimized dispersing agent for EPD. The kinetics of EPD for oxidants (Al) and reductants (MoO<sub>3</sub>) were systematically investigated, which contributed to adjusting the equivalence ratio of targeted energetic chips after changing the EPD dynamic behaviors of Al and MoO<sub>3</sub> in suspension. In addition, the obtained nano-Al/MoO<sub>3</sub> MIC energetic chips showed excellent heat-release performance with a high heat release of ca. 3340 J/g, and were successfully ignited with a dazzling flame recorded by a high-speed camera. Moreover, the fabrication method here is fully compatible with a micro-electromechanical system (MEMS), which suggests promising potential in designing and developing other MIC energetic chips or devices for micro-ignition/propulsion applications.
ISSN:2079-4991