| Summary: | For growing high quality epitaxial VO<sub>2</sub> thin films, the substrate with suitable lattice parameters is very important if considering the lattice matching. In addition, the thermal conductivity between the substrate and epitaxial film should be also considered. Interestingly, the c-plane of hexagonal 6H-SiC with high thermal conductivity has a similar lattice structure to the VO<sub>2</sub> (010), which enables epitaxial growth of high quality VO<sub>2</sub> films on 6H-SiC substrates. In the current study, we deposited VO<sub>2</sub> thin films directly on 6H-SiC (0001) single-crystal substrates by pulsed laser deposition (PLD) and systematically investigated the crystal structures and surface morphologies of the films as the function of growth temperature and film thickness. With optimized conditions, the obtained epitaxial VO<sub>2</sub> film showed pure monoclinic phase structure and excellent phase transition properties. Across the phase transition from monoclinic structure (M1) to tetragonal rutile structure (R), the VO<sub>2</sub>/6H-SiC (0001) film demonstrated a sharp resistance change up to five orders of magnitude and a narrow hysteresis width of only 3.3 °C.
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