Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks
We developed a mathematical analysis method of reflectometry data and used it to characterize the internal structure of TiO2/SiO2/Si and Ti/SiO2/Si stacks. Atomic concentration profiles of all the chemical elements composing the samples were reconstructed from the analysis of the reflectivity curves...
Main Author: | Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, Evgeniy V Ubyivovk, Sergey Yulin, Mihaela Gorgoi and Franz Schäfers |
---|---|
Format: | Article |
Language: | English |
Published: |
Taylor & Francis Group
2012-01-01
|
Series: | Science and Technology of Advanced Materials |
Online Access: | http://iopscience.iop.org/1468-6996/13/1/015001 |
Similar Items
-
Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing
by: Haibo Fan, et al.
Published: (2016-01-01) -
Graphene/SrTiO3 hetero interface studied by X-ray photoelectron spectroscopy
by: S. Karamat, et al.
Published: (2016-08-01) -
Computer simulation of SiOâ†x structure based on thin film Si 2p peaks of X-ray photoelectron spectroscopy
by: Sahota, Makhan Singh
Published: (1992) -
Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry
by: Xuguang Luo, et al.
Published: (2018-06-01) -
Study of mesoporous CdS-quantum-dot-sensitized TiO2 films by using X-ray photoelectron spectroscopy and AFM
by: Mohamed N. Ghazzal, et al.
Published: (2014-01-01)