Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks

We developed a mathematical analysis method of reflectometry data and used it to characterize the internal structure of TiO2/SiO2/Si and Ti/SiO2/Si stacks. Atomic concentration profiles of all the chemical elements composing the samples were reconstructed from the analysis of the reflectivity curves...

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Main Author: Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, Evgeniy V Ubyivovk, Sergey Yulin, Mihaela Gorgoi and Franz Schäfers
Format: Article
Language:English
Published: Taylor & Francis Group 2012-01-01
Series:Science and Technology of Advanced Materials
Online Access:http://iopscience.iop.org/1468-6996/13/1/015001
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spelling doaj-b63beccaca9344f4967fa1c64192694a2020-11-25T01:05:36ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142012-01-01131015001Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, Evgeniy V Ubyivovk, Sergey Yulin, Mihaela Gorgoi and Franz SchäfersWe developed a mathematical analysis method of reflectometry data and used it to characterize the internal structure of TiO2/SiO2/Si and Ti/SiO2/Si stacks. Atomic concentration profiles of all the chemical elements composing the samples were reconstructed from the analysis of the reflectivity curves measured versus the incidence angle at different soft x-ray reflection (SXR) photon energies. The results were confirmed by the conventional techniques of hard x-ray photoelectron spectroscopy (HXPES) and high-resolution transmission electron microscopy (HRTEM). The depth variation of the chemical composition, thicknesses and densities of individual layers extracted from SXR and HXPES measurements are in close agreement and correlate well with the HRTEM images.http://iopscience.iop.org/1468-6996/13/1/015001
collection DOAJ
language English
format Article
sources DOAJ
author Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, Evgeniy V Ubyivovk, Sergey Yulin, Mihaela Gorgoi and Franz Schäfers
spellingShingle Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, Evgeniy V Ubyivovk, Sergey Yulin, Mihaela Gorgoi and Franz Schäfers
Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks
Science and Technology of Advanced Materials
author_facet Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, Evgeniy V Ubyivovk, Sergey Yulin, Mihaela Gorgoi and Franz Schäfers
author_sort Elena O Filatova, Igor V Kozhevnikov, Andrey A Sokolov, Evgeniy V Ubyivovk, Sergey Yulin, Mihaela Gorgoi and Franz Schäfers
title Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks
title_short Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks
title_full Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks
title_fullStr Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks
title_full_unstemmed Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks
title_sort soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of tio2(ti)/sio2/si stacks
publisher Taylor & Francis Group
series Science and Technology of Advanced Materials
issn 1468-6996
1878-5514
publishDate 2012-01-01
description We developed a mathematical analysis method of reflectometry data and used it to characterize the internal structure of TiO2/SiO2/Si and Ti/SiO2/Si stacks. Atomic concentration profiles of all the chemical elements composing the samples were reconstructed from the analysis of the reflectivity curves measured versus the incidence angle at different soft x-ray reflection (SXR) photon energies. The results were confirmed by the conventional techniques of hard x-ray photoelectron spectroscopy (HXPES) and high-resolution transmission electron microscopy (HRTEM). The depth variation of the chemical composition, thicknesses and densities of individual layers extracted from SXR and HXPES measurements are in close agreement and correlate well with the HRTEM images.
url http://iopscience.iop.org/1468-6996/13/1/015001
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