Study on the high-power semi-insulating GaAs PCSS with quantum well structure

Study on the high-power semi-insulating GaAs PCSS with quantum well structure

A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, resp...

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Main Authors: Chongbiao Luan, Bo Wang, Yupeng Huang, Xiqin Li, Hongtao Li, Jinshui Xiao
Format: Article
Language:English
Published: AIP Publishing LLC 2016-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4952595
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spelling doaj-b62c2af04ee8426fa1c13fc61b36cbdf2020-11-25T00:40:40ZengAIP Publishing LLCAIP Advances2158-32262016-05-0165055216055216-510.1063/1.4952595075605ADVStudy on the high-power semi-insulating GaAs PCSS with quantum well structureChongbiao Luan0Bo Wang1Yupeng Huang2Xiqin Li3Hongtao Li4Jinshui Xiao5Key laboratory of pulsed power, Institute of Fluid Physics, CAEP, P.O. Box 919-107, Mianyang 621900, ChinaKey laboratory of pulsed power, Institute of Fluid Physics, CAEP, P.O. Box 919-107, Mianyang 621900, ChinaKey laboratory of pulsed power, Institute of Fluid Physics, CAEP, P.O. Box 919-107, Mianyang 621900, ChinaKey laboratory of pulsed power, Institute of Fluid Physics, CAEP, P.O. Box 919-107, Mianyang 621900, ChinaKey laboratory of pulsed power, Institute of Fluid Physics, CAEP, P.O. Box 919-107, Mianyang 621900, ChinaKey laboratory of pulsed power, Institute of Fluid Physics, CAEP, P.O. Box 919-107, Mianyang 621900, ChinaA high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.http://dx.doi.org/10.1063/1.4952595
collection DOAJ
language English
format Article
sources DOAJ
author Chongbiao Luan
Bo Wang
Yupeng Huang
Xiqin Li
Hongtao Li
Jinshui Xiao
spellingShingle Chongbiao Luan
Bo Wang
Yupeng Huang
Xiqin Li
Hongtao Li
Jinshui Xiao
Study on the high-power semi-insulating GaAs PCSS with quantum well structure
AIP Advances
author_facet Chongbiao Luan
Bo Wang
Yupeng Huang
Xiqin Li
Hongtao Li
Jinshui Xiao
author_sort Chongbiao Luan
title Study on the high-power semi-insulating GaAs PCSS with quantum well structure
title_short Study on the high-power semi-insulating GaAs PCSS with quantum well structure
title_full Study on the high-power semi-insulating GaAs PCSS with quantum well structure
title_fullStr Study on the high-power semi-insulating GaAs PCSS with quantum well structure
title_full_unstemmed Study on the high-power semi-insulating GaAs PCSS with quantum well structure
title_sort study on the high-power semi-insulating gaas pcss with quantum well structure
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-05-01
description A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser pulse with an incident optical energy of 5.4 mJ, a wavelength of 1064 nm and an optical pulse width of 25 ns, the on-state resistance of the AlGaAs/GaAs PCSS was only 0.45 Ω, and the longevity of the AlGaAs/GaAs PCSS was larger than 106 shots. The results show that this structure reduces the on-state resistance and extends the longevity of the GaAs PCSS.
url http://dx.doi.org/10.1063/1.4952595
work_keys_str_mv AT chongbiaoluan studyonthehighpowersemiinsulatinggaaspcsswithquantumwellstructure
AT bowang studyonthehighpowersemiinsulatinggaaspcsswithquantumwellstructure
AT yupenghuang studyonthehighpowersemiinsulatinggaaspcsswithquantumwellstructure
AT xiqinli studyonthehighpowersemiinsulatinggaaspcsswithquantumwellstructure
AT hongtaoli studyonthehighpowersemiinsulatinggaaspcsswithquantumwellstructure
AT jinshuixiao studyonthehighpowersemiinsulatinggaaspcsswithquantumwellstructure
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