Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiNX field plate structure
Diamond vertical Schottky barrier diodes (SBDs) with SiNX field-plate (FP) structure has been investigated. Ti/Au and Zr/Ni/Au metal stacks are used as ohmic and Schottky metal, respectively. The forward current density of SBDs with and without FP are 1600 and 3300 A/cm2 at −10 V, respectively. The...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-06-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719304103 |