An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs

An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs

This paper presents an improved investigation into the effects of temperature-dependent parasitic elements on the silicon carbide (SiC) MOSFET power losses. Based on the physical knowledge of MOSFET, a circuit-level loss analytical model is proposed, which takes the parasitic elements of the power d...

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Bibliographic Details
Main Authors: Yinong Zeng, Yingping Yi, Pu Liu
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Applied Sciences
Subjects:
silicon carbide
MOSFET
parasitic elements
power losses
Online Access:https://www.mdpi.com/2076-3417/10/20/7192

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