The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well as its reverse current temperature dependence. The IR−V characteristics exhibit an almost constant curren...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/71503 |