Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

• Main Authors: E. A. Plis, S. S. Krishna, N. Gautam, S. Myers, S. Krishna
• Format: Article
• Language: English
• Published: IEEE 2011-01-01
• Series: IEEE Photonics Journal
• Subjects: Optoelectronic materials; nanostructures; InAs/GaSb strained layer superlattices (SLS)
• Online Access: https://ieeexplore.ieee.org/document/5729307/
• ISSN: 1943-0655

We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 10¹¹ Jones (V_b = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (V_b = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR).