The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the stru...

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Bibliographic Details
Main Authors: Hongqiang Li, Jianing Wang, Jinjun Bai, Shanshan Zhang, Sai Zhang, Yaqiang Sun, Qianzhi Dou, Mingjun Ding, Youxi Wang, Dan Qu, Jilin Du, Chunxiao Tang, Enbang Li, Joan Daniel Prades
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Nanomaterials
Subjects:
Ge/Si quantum well
tensile strain
n-type doping
lattice thermal mismatch process
Si-based light source
Online Access:https://www.mdpi.com/2079-4991/10/5/1006

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