Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory
Excitons in various spin and valley configurations control the optical properties of ultrathin transition metal dichalcogenides. Here, the authors develop theoretical and experimental methods to determine the exciton g-factors for all possible spin-valley configurations of excitons in monolayer and...
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2020-09-01
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Online Access: | https://doi.org/10.1038/s41467-020-18019-1 |
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doaj-b39c819dc6fc4ba2b5be9841866e566d2021-09-12T11:47:27ZengNature Publishing GroupNature Communications2041-17232020-09-011111810.1038/s41467-020-18019-1Exciton g-factors in monolayer and bilayer WSe2 from experiment and theoryJonathan Förste0Nikita V. Tepliakov1Stanislav Yu. Kruchinin2Jessica Lindlau3Victor Funk4Michael Förg5Kenji Watanabe6Takashi Taniguchi7Anvar S. Baimuratov8Alexander Högele9Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität MünchenInformation Optical Technologies Center, ITMO UniversityCenter for Computational Materials Sciences, Faculty of Physics, University of ViennaFakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität MünchenFakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität MünchenFakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität MünchenResearch Center for Functional Materials, National Institute for Materials ScienceInternational Center for Materials Nanoarchitectonics, National Institute for Materials ScienceFakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität MünchenFakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität MünchenExcitons in various spin and valley configurations control the optical properties of ultrathin transition metal dichalcogenides. Here, the authors develop theoretical and experimental methods to determine the exciton g-factors for all possible spin-valley configurations of excitons in monolayer and bilayer WSe2, including valley-indirect excitons.https://doi.org/10.1038/s41467-020-18019-1 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jonathan Förste Nikita V. Tepliakov Stanislav Yu. Kruchinin Jessica Lindlau Victor Funk Michael Förg Kenji Watanabe Takashi Taniguchi Anvar S. Baimuratov Alexander Högele |
spellingShingle |
Jonathan Förste Nikita V. Tepliakov Stanislav Yu. Kruchinin Jessica Lindlau Victor Funk Michael Förg Kenji Watanabe Takashi Taniguchi Anvar S. Baimuratov Alexander Högele Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory Nature Communications |
author_facet |
Jonathan Förste Nikita V. Tepliakov Stanislav Yu. Kruchinin Jessica Lindlau Victor Funk Michael Förg Kenji Watanabe Takashi Taniguchi Anvar S. Baimuratov Alexander Högele |
author_sort |
Jonathan Förste |
title |
Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory |
title_short |
Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory |
title_full |
Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory |
title_fullStr |
Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory |
title_full_unstemmed |
Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory |
title_sort |
exciton g-factors in monolayer and bilayer wse2 from experiment and theory |
publisher |
Nature Publishing Group |
series |
Nature Communications |
issn |
2041-1723 |
publishDate |
2020-09-01 |
description |
Excitons in various spin and valley configurations control the optical properties of ultrathin transition metal dichalcogenides. Here, the authors develop theoretical and experimental methods to determine the exciton g-factors for all possible spin-valley configurations of excitons in monolayer and bilayer WSe2, including valley-indirect excitons. |
url |
https://doi.org/10.1038/s41467-020-18019-1 |
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