Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

<p>Abstract</p> <p>Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430&#176;C. After 1.5 ML of the InAs wetting layer (WL) growth by o...

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Bibliographic Details
Main Authors: Toujyou Takashi, Tsukamoto Shiro
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Quantum dot
Site control
In situ
Scanning tunneling microscopy
Molecular beam epitaxy
Online Access:http://dx.doi.org/10.1007/s11671-010-9802-z

Internet

http://dx.doi.org/10.1007/s11671-010-9802-z

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