Obtaining memristor elements based on non-noble materials

Obtaining memristor elements based on non-noble materials

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This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative d...

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Main Authors: Troyan Pavel, Sakharov Yury, Zhidik Ekaterina
Format: Article
Language:English
Published: EDP Sciences 2018-01-01
Series:MATEC Web of Conferences
Online Access:https://doi.org/10.1051/matecconf/201714303009
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spelling doaj-b2627e605eee47c69fda325e0d6915ad2021-02-02T07:35:20ZengEDP SciencesMATEC Web of Conferences2261-236X2018-01-011430300910.1051/matecconf/201714303009matecconf_yssip2017_03009Obtaining memristor elements based on non-noble materialsTroyan PavelSakharov YuryZhidik EkaterinaThis study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative differential resistance on the current–voltage curve can be caused only by metal electrodes whose vacuum work function exceeds that of TiO2. The appearance of the N-type region on the current–voltage curve of a memristor element is possible only after electrically assisted vacuum forming. Mo–TiO2/TiOx–Ni/Cu structures, for which the ILR/IHR ratio reaches two orders of magnitude at a voltage of less than 4 V, have the most stable parameters.https://doi.org/10.1051/matecconf/201714303009
collection DOAJ
language English
format Article
sources DOAJ
author Troyan Pavel
Sakharov Yury
Zhidik Ekaterina
spellingShingle Troyan Pavel
Sakharov Yury
Zhidik Ekaterina
Obtaining memristor elements based on non-noble materials
MATEC Web of Conferences
author_facet Troyan Pavel
Sakharov Yury
Zhidik Ekaterina
author_sort Troyan Pavel
title Obtaining memristor elements based on non-noble materials
title_short Obtaining memristor elements based on non-noble materials
title_full Obtaining memristor elements based on non-noble materials
title_fullStr Obtaining memristor elements based on non-noble materials
title_full_unstemmed Obtaining memristor elements based on non-noble materials
title_sort obtaining memristor elements based on non-noble materials
publisher EDP Sciences
series MATEC Web of Conferences
issn 2261-236X
publishDate 2018-01-01
description This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative differential resistance on the current–voltage curve can be caused only by metal electrodes whose vacuum work function exceeds that of TiO2. The appearance of the N-type region on the current–voltage curve of a memristor element is possible only after electrically assisted vacuum forming. Mo–TiO2/TiOx–Ni/Cu structures, for which the ILR/IHR ratio reaches two orders of magnitude at a voltage of less than 4 V, have the most stable parameters.
url https://doi.org/10.1051/matecconf/201714303009
work_keys_str_mv AT troyanpavel obtainingmemristorelementsbasedonnonnoblematerials
AT sakharovyury obtainingmemristorelementsbasedonnonnoblematerials
AT zhidikekaterina obtainingmemristorelementsbasedonnonnoblematerials
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