Obtaining memristor elements based on non-noble materials
This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative d...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2018-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | https://doi.org/10.1051/matecconf/201714303009 |
| Summary: | This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative differential resistance on the current–voltage curve can be caused only by metal electrodes whose vacuum work function exceeds that of TiO2. The appearance of the N-type region on the current–voltage curve of a memristor element is possible only after electrically assisted vacuum forming. Mo–TiO2/TiOx–Ni/Cu structures, for which the ILR/IHR ratio reaches two orders of magnitude at a voltage of less than 4 V, have the most stable parameters. |
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| ISSN: | 2261-236X |