Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply...

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Main Authors:	Ji Yeon Hyun, Soohyun Bae, Yoon Chung Nam, Dongkyun Kang, Sang-Won Lee, Donghwan Kim, Jooyoung Park, Yoonmook Kang, Hae-Seok Lee
Format:	Article
Language:	English
Published:	MDPI AG 2019-07-01
Series:	Sustainability
Subjects:	surface passivation hydrogenation silicon solar cells aluminum oxide field-effect passivation chemical passivation
Online Access:	https://www.mdpi.com/2071-1050/11/14/3784

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spelling	doaj-b21bf44a0e984765bbee04f5bbc04d712020-11-25T01:52:32ZengMDPI AGSustainability2071-10502019-07-011114378410.3390/su11143784su11143784Surface Passivation of Boron Emitters on n-Type Silicon Solar CellsJi Yeon Hyun0Soohyun Bae1Yoon Chung Nam2Dongkyun Kang3Sang-Won Lee4Donghwan Kim5Jooyoung Park6Yoonmook Kang7Hae-Seok Lee8Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaDepartment of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaKU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaKU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaKU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, KoreaAl<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiN<sub>x</sub> film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al<sub>2</sub>O<sub>3</sub> structure using electron energy-loss spectroscopy.https://www.mdpi.com/2071-1050/11/14/3784surface passivationhydrogenationsilicon solar cellsaluminum oxidefield-effect passivationchemical passivation
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Ji Yeon Hyun Soohyun Bae Yoon Chung Nam Dongkyun Kang Sang-Won Lee Donghwan Kim Jooyoung Park Yoonmook Kang Hae-Seok Lee
spellingShingle	Ji Yeon Hyun Soohyun Bae Yoon Chung Nam Dongkyun Kang Sang-Won Lee Donghwan Kim Jooyoung Park Yoonmook Kang Hae-Seok Lee Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells Sustainability surface passivation hydrogenation silicon solar cells aluminum oxide field-effect passivation chemical passivation
author_facet	Ji Yeon Hyun Soohyun Bae Yoon Chung Nam Dongkyun Kang Sang-Won Lee Donghwan Kim Jooyoung Park Yoonmook Kang Hae-Seok Lee
author_sort	Ji Yeon Hyun
title	Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
title_short	Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
title_full	Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
title_fullStr	Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
title_full_unstemmed	Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
title_sort	surface passivation of boron emitters on n-type silicon solar cells
publisher	MDPI AG
series	Sustainability
issn	2071-1050
publishDate	2019-07-01
description	Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiN<sub>x</sub> film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al<sub>2</sub>O<sub>3</sub> structure using electron energy-loss spectroscopy.
topic	surface passivation hydrogenation silicon solar cells aluminum oxide field-effect passivation chemical passivation
url	https://www.mdpi.com/2071-1050/11/14/3784
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Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

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