GaN epitaxial layers grown on multilayer graphene by MOCVD

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between...

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Bibliographic Details
Main Authors: Tianbao Li, Chenyang Liu, Zhe Zhang, Bin Yu, Hailiang Dong, Wei Jia, Zhigang Jia, Chunyan Yu, Lin Gan, Bingshe Xu
Format: Article
Language:English
Published: AIP Publishing LLC 2018-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5025899

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