Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Indium-incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of In<sub>x</sub>Ga<sub>1-x</sub>N layer incr...

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Bibliographic Details
Main Authors: ChengDa Tsai, Ikai Lo, YingChieh Wang, ChenChi Yang, HongYi Yang, HueiJyun Shih, HuiChun Huang, Mitch M. C. Chou, Louie Huang, Binson Tseng
Format: Article
Language:English
Published: MDPI AG 2019-06-01
Series:Crystals
Subjects:
plasma-assisted molecular beam epitaxy
InGaN
GaN-microdisks
Online Access:https://www.mdpi.com/2073-4352/9/6/308

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