Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Indium-incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of In<sub>x</sub>Ga<sub>1-x</sub>N layer incr...

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Main Authors: ChengDa Tsai, Ikai Lo, YingChieh Wang, ChenChi Yang, HongYi Yang, HueiJyun Shih, HuiChun Huang, Mitch M. C. Chou, Louie Huang, Binson Tseng
Format: Article
Language:English
Published: MDPI AG 2019-06-01
Series:Crystals
Subjects:
plasma-assisted molecular beam epitaxy
InGaN
GaN-microdisks
Online Access:https://www.mdpi.com/2073-4352/9/6/308
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spelling doaj-b1fc30921d924dd98a1f839c9b62b75d2020-11-24T21:21:13ZengMDPI AGCrystals2073-43522019-06-019630810.3390/cryst9060308cryst9060308Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam EpitaxyChengDa Tsai0Ikai Lo1YingChieh Wang2ChenChi Yang3HongYi Yang4HueiJyun Shih5HuiChun Huang6Mitch M. C. Chou7Louie Huang8Binson Tseng9Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanDepartment of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, TaiwanAdvanced Semiconductor Engineering, Inc., Kaohsiung 811, TaiwanAdvanced Semiconductor Engineering, Inc., Kaohsiung 811, TaiwanIndium-incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of In<sub>x</sub>Ga<sub>1-x</sub>N layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 &#176;C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 &#176;C to 720 &#176;C and dropped to zero at 780 &#176;C. By adjusting the growth parameters, we demonstrated an appropriate In<sub>x</sub>Ga<sub>1-x</sub>N layer as a buffer to grow high-indium-content In<sub>x</sub>Ga<sub>1-x</sub>N/GaN microdisk quantum wells for micro-LED applications.https://www.mdpi.com/2073-4352/9/6/308plasma-assisted molecular beam epitaxyInGaNGaN-microdisks
collection DOAJ
language English
format Article
sources DOAJ
author ChengDa Tsai
Ikai Lo
YingChieh Wang
ChenChi Yang
HongYi Yang
HueiJyun Shih
HuiChun Huang
Mitch M. C. Chou
Louie Huang
Binson Tseng
spellingShingle ChengDa Tsai
Ikai Lo
YingChieh Wang
ChenChi Yang
HongYi Yang
HueiJyun Shih
HuiChun Huang
Mitch M. C. Chou
Louie Huang
Binson Tseng
Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
Crystals
plasma-assisted molecular beam epitaxy
InGaN
GaN-microdisks
author_facet ChengDa Tsai
Ikai Lo
YingChieh Wang
ChenChi Yang
HongYi Yang
HueiJyun Shih
HuiChun Huang
Mitch M. C. Chou
Louie Huang
Binson Tseng
author_sort ChengDa Tsai
title Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
title_short Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
title_full Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
title_fullStr Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
title_full_unstemmed Indium-Incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy
title_sort indium-incorporation with in<sub>x</sub>ga<sub>1-x</sub>n layers on gan-microdisks by plasma-assisted molecular beam epitaxy
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2019-06-01
description Indium-incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of In<sub>x</sub>Ga<sub>1-x</sub>N layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 &#176;C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 &#176;C to 720 &#176;C and dropped to zero at 780 &#176;C. By adjusting the growth parameters, we demonstrated an appropriate In<sub>x</sub>Ga<sub>1-x</sub>N layer as a buffer to grow high-indium-content In<sub>x</sub>Ga<sub>1-x</sub>N/GaN microdisk quantum wells for micro-LED applications.
topic plasma-assisted molecular beam epitaxy
InGaN
GaN-microdisks
url https://www.mdpi.com/2073-4352/9/6/308
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