| Summary: | Indium-incorporation with In<sub>x</sub>Ga<sub>1-x</sub>N layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of In<sub>x</sub>Ga<sub>1-x</sub>N layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate In<sub>x</sub>Ga<sub>1-x</sub>N layer as a buffer to grow high-indium-content In<sub>x</sub>Ga<sub>1-x</sub>N/GaN microdisk quantum wells for micro-LED applications.
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