Electronic structures and three-dimensional effects of boron-doped carbon nanotubes

• Main Author: Takashi Koretsune and Susumu Saito
• Format: Article
• Language: English
• Published: Taylor & Francis Group 2008-01-01
• Series: Science and Technology of Advanced Materials
• Subjects: boron doping; carbon nanotubes; superconductivity; density functional theory
• Online Access: http://dx.doi.org/10.1088/1468-6996/9/4/044203

We study boron-doped carbon nanotubes by first-principles methods based on the density functional theory. To discuss the possibility of superconductivity, we calculate the electronic band structure and the density of states (DOS) of boron-doped (10,0) nanotubes by changing the boron density. It is found that the Fermi level density of states D(epsilonF) increases upon lowering the boron density. This can be understood in terms of the rigid band picture where the one-dimensional van Hove singularity lies at the edge of the valence band in the DOS of the pristine nanotube. The effect of three-dimensionality is also considered by performing the calculations for bundled (10,0) nanotubes and boron-doped double-walled carbon nanotubes (10,0)@(19,0). From the calculation of the bundled nanotubes, it is found that interwall dispersion is sufficiently large to broaden the peaks of the van Hove singularity in the DOS. Thus, to achieve the high D(epsilonF) using the bundle of nanotubes with single chirality, we should take into account the distance from each nanotube. In the case of double-walled carbon nanotubes, we find that the holes introduced to the inner tube by boron doping spread also on the outer tube, while the band structure of each tube remains almost unchanged.