Band offsets in strained layer superlattices
Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and o...
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Isfahan University of Technology
2004-12-01
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| Series: | Iranian Journal of Physics Research |
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| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-268&slc_lang=en&sid=1 |
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doaj-b17c5b741ade41d588d6fb9c78902fc02020-11-24T22:05:53ZengIsfahan University of TechnologyIranian Journal of Physics Research1682-69572004-12-0143318318Band offsets in strained layer superlatticesM. OloumiC. C. MatthaiT. H. Shen Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and on the indium composition. In addition, we have shown that it is possible to control the interface band discontinuities by the introduction of an interlayer of Ge at the interface. http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-268&slc_lang=en&sid=1lattice- mismatchedstrained layer |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
M. Oloumi C. C. Matthai T. H. Shen |
| spellingShingle |
M. Oloumi C. C. Matthai T. H. Shen Band offsets in strained layer superlattices Iranian Journal of Physics Research lattice- mismatched strained layer |
| author_facet |
M. Oloumi C. C. Matthai T. H. Shen |
| author_sort |
M. Oloumi |
| title |
Band offsets in strained layer superlattices |
| title_short |
Band offsets in strained layer superlattices |
| title_full |
Band offsets in strained layer superlattices |
| title_fullStr |
Band offsets in strained layer superlattices |
| title_full_unstemmed |
Band offsets in strained layer superlattices |
| title_sort |
band offsets in strained layer superlattices |
| publisher |
Isfahan University of Technology |
| series |
Iranian Journal of Physics Research |
| issn |
1682-6957 |
| publishDate |
2004-12-01 |
| description |
Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and on the indium composition. In addition, we have shown that it is possible to control the interface band discontinuities by the introduction of an interlayer of Ge at the interface. |
| topic |
lattice- mismatched strained layer |
| url |
http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-268&slc_lang=en&sid=1 |
| work_keys_str_mv |
AT moloumi bandoffsetsinstrainedlayersuperlattices AT ccmatthai bandoffsetsinstrainedlayersuperlattices AT thshen bandoffsetsinstrainedlayersuperlattices |
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1725824226968993792 |