Band offsets in strained layer superlattices
Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and o...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Isfahan University of Technology
2004-12-01
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| Series: | Iranian Journal of Physics Research |
| Subjects: | |
| Online Access: | http://ijpr.iut.ac.ir/browse.php?a_code=A-10-1-268&slc_lang=en&sid=1 |
| Summary: | Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and on the indium composition. In addition, we have shown that it is possible to control the interface band discontinuities by the introduction of an interlayer of Ge at the interface. |
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| ISSN: | 1682-6957 |