High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation

High Tc superconducting YBa2Cu3O7-d thin films and YBa2Cu37-δ/PrBa2Cu3O7-δ superlattices with various periods and layer thicknesses were deposited by laser ablation on SrTiO3 (100) single crystal substrates using an XeCl excimer laser (λ = 308 nm). The structure of the films was studied by SEM/EDS a...

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Main Authors: J. Levoska, S. Leppävuori
Format: Article
Language:English
Published: Hindawi Limited 1993-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1993/75496
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spelling doaj-b159e3b6556d40a3ac713dc3495282882020-11-25T00:23:30ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50311993-01-01153-413914610.1155/1993/75496High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser AblationJ. Levoska0S. Leppävuori1Microelectronics and Material Physics Laboratories, University of Oulu, Oulu SF-90570, FinlandMicroelectronics and Material Physics Laboratories, University of Oulu, Oulu SF-90570, FinlandHigh Tc superconducting YBa2Cu3O7-d thin films and YBa2Cu37-δ/PrBa2Cu3O7-δ superlattices with various periods and layer thicknesses were deposited by laser ablation on SrTiO3 (100) single crystal substrates using an XeCl excimer laser (λ = 308 nm). The structure of the films was studied by SEM/EDS and X-ray diffraction. The films and superlattices deposited in an in situ process were epitaxial with the c-axis perpendicular to the substrate surface and the a- and b-axes parallel with the SrTiO3 [100] or [010] directions. The electrical properties were studied by measuring the current-voltage characteristics, resistivity and critical current. For the in situ deposited YBa2Cu3O7-d films the zero resistivity temperature was 87 to 90 K and the critical current at 77 K was above 2 × 106 A/cm2. For the films deposited at room temperature and post annealed under in situ deposition conditions, the critical temperature was the same, but the critical current was 0.5 × 106 A/cm2.http://dx.doi.org/10.1155/1993/75496
collection DOAJ
language English
format Article
sources DOAJ
author J. Levoska
S. Leppävuori
spellingShingle J. Levoska
S. Leppävuori
High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation
Active and Passive Electronic Components
author_facet J. Levoska
S. Leppävuori
author_sort J. Levoska
title High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation
title_short High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation
title_full High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation
title_fullStr High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation
title_full_unstemmed High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation
title_sort high-tc superconducting yba2cu3o7-δ films and yba2cu3o7-δ/prba2cu3o7-δ superlattices deposited by laser ablation
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 1993-01-01
description High Tc superconducting YBa2Cu3O7-d thin films and YBa2Cu37-δ/PrBa2Cu3O7-δ superlattices with various periods and layer thicknesses were deposited by laser ablation on SrTiO3 (100) single crystal substrates using an XeCl excimer laser (λ = 308 nm). The structure of the films was studied by SEM/EDS and X-ray diffraction. The films and superlattices deposited in an in situ process were epitaxial with the c-axis perpendicular to the substrate surface and the a- and b-axes parallel with the SrTiO3 [100] or [010] directions. The electrical properties were studied by measuring the current-voltage characteristics, resistivity and critical current. For the in situ deposited YBa2Cu3O7-d films the zero resistivity temperature was 87 to 90 K and the critical current at 77 K was above 2 × 106 A/cm2. For the films deposited at room temperature and post annealed under in situ deposition conditions, the critical temperature was the same, but the critical current was 0.5 × 106 A/cm2.
url http://dx.doi.org/10.1155/1993/75496
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