High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation
High Tc superconducting YBa2Cu3O7-d thin films and YBa2Cu37-δ/PrBa2Cu3O7-δ superlattices with various periods and layer thicknesses were deposited by laser ablation on SrTiO3 (100) single crystal substrates using an XeCl excimer laser (λ = 308 nm). The structure of the films was studied by SEM/EDS a...
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1993-01-01
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1993/75496 |
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doaj-b159e3b6556d40a3ac713dc3495282882020-11-25T00:23:30ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50311993-01-01153-413914610.1155/1993/75496High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser AblationJ. Levoska0S. Leppävuori1Microelectronics and Material Physics Laboratories, University of Oulu, Oulu SF-90570, FinlandMicroelectronics and Material Physics Laboratories, University of Oulu, Oulu SF-90570, FinlandHigh Tc superconducting YBa2Cu3O7-d thin films and YBa2Cu37-δ/PrBa2Cu3O7-δ superlattices with various periods and layer thicknesses were deposited by laser ablation on SrTiO3 (100) single crystal substrates using an XeCl excimer laser (λ = 308 nm). The structure of the films was studied by SEM/EDS and X-ray diffraction. The films and superlattices deposited in an in situ process were epitaxial with the c-axis perpendicular to the substrate surface and the a- and b-axes parallel with the SrTiO3 [100] or [010] directions. The electrical properties were studied by measuring the current-voltage characteristics, resistivity and critical current. For the in situ deposited YBa2Cu3O7-d films the zero resistivity temperature was 87 to 90 K and the critical current at 77 K was above 2 × 106 A/cm2. For the films deposited at room temperature and post annealed under in situ deposition conditions, the critical temperature was the same, but the critical current was 0.5 × 106 A/cm2.http://dx.doi.org/10.1155/1993/75496 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
J. Levoska S. Leppävuori |
spellingShingle |
J. Levoska S. Leppävuori High-Tc Superconducting YBa2Cu3O7-δ Films and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation Active and Passive Electronic Components |
author_facet |
J. Levoska S. Leppävuori |
author_sort |
J. Levoska |
title |
High-Tc Superconducting YBa2Cu3O7-δ Films
and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation |
title_short |
High-Tc Superconducting YBa2Cu3O7-δ Films
and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation |
title_full |
High-Tc Superconducting YBa2Cu3O7-δ Films
and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation |
title_fullStr |
High-Tc Superconducting YBa2Cu3O7-δ Films
and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation |
title_full_unstemmed |
High-Tc Superconducting YBa2Cu3O7-δ Films
and YBa2Cu3O7-δ/PrBa2Cu3O7-δ Superlattices Deposited by Laser Ablation |
title_sort |
high-tc superconducting yba2cu3o7-δ films
and yba2cu3o7-δ/prba2cu3o7-δ superlattices deposited by laser ablation |
publisher |
Hindawi Limited |
series |
Active and Passive Electronic Components |
issn |
0882-7516 1563-5031 |
publishDate |
1993-01-01 |
description |
High Tc superconducting YBa2Cu3O7-d thin films and YBa2Cu37-δ/PrBa2Cu3O7-δ superlattices with various periods and layer thicknesses were deposited by laser ablation on SrTiO3 (100) single crystal substrates
using an XeCl excimer laser (λ = 308 nm). The structure of the films was studied by SEM/EDS and
X-ray diffraction. The films and superlattices deposited in an in situ process were epitaxial with the c-axis
perpendicular to the substrate surface and the a- and b-axes parallel with the SrTiO3 [100] or [010]
directions. The electrical properties were studied by measuring the current-voltage characteristics,
resistivity and critical current. For the in situ deposited YBa2Cu3O7-d films the zero resistivity temperature was 87 to 90 K and the critical current at 77 K was above 2 × 106 A/cm2. For the films deposited at
room temperature and post annealed under in situ deposition conditions, the critical temperature was
the same, but the critical current was 0.5 × 106 A/cm2. |
url |
http://dx.doi.org/10.1155/1993/75496 |
work_keys_str_mv |
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