Simulation and optimization of the nSiC layer’s thickness in a nSiC/pSi photovoltaic cell
Simulations of the emitter layer in 3C-SiC heterostructure solar cells were performed by means of SCAPS to model the optimal thickness and predict the influence on cell’s behaviour. Then, the cells have been elaborated by chemical vapor deposition and characterized. The opto-electrical measurement...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Collaborating Academics IP
2019-03-01
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| Series: | Materials and Devices |
| Subjects: | |
| Online Access: | http://caip.co-ac.com/index.php/materialsanddevices/article/view/79 |
| Summary: | Simulations of the emitter layer in 3C-SiC heterostructure solar cells were performed by means of
SCAPS to model the optimal thickness and predict the influence on cell’s behaviour. Then, the cells have been elaborated by chemical vapor deposition and characterized. The opto-electrical measurements showed an improvement of the absorption of photons in the short wavelengths thanks to the thin layer of the emitter, and the non-degradation in bulk of the base cell. On the front side, the using of Ti/Au contacts also leads to an improvement in the absorption of photons thanks to the low series resistance. |
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| ISSN: | 2495-3911 |