Single crystal functional oxides on silicon

Synthesis of single-crystal complex-oxide films directly on silicon is difficult due to differing interfacial chemistry. Here, the authors demonstrate room-temperature integration of single-crystal lead zirconate titanate on to silicon to act as a gate insulator in a field-effect transistor.

Bibliographic Details
Main Authors: Saidur Rahman Bakaul, Claudy Rayan Serrao, Michelle Lee, Chun Wing Yeung, Asis Sarker, Shang-Lin Hsu, Ajay Kumar Yadav, Liv Dedon, Long You, Asif Islam Khan, James David Clarkson, Chenming Hu, Ramamoorthy Ramesh, Sayeef Salahuddin
Format: Article
Language:English
Published: Nature Publishing Group 2016-02-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms10547
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spelling doaj-b0e855facabb4c98bf0d6af5e7692a8d2021-05-11T11:10:16ZengNature Publishing GroupNature Communications2041-17232016-02-01711510.1038/ncomms10547Single crystal functional oxides on siliconSaidur Rahman Bakaul0Claudy Rayan Serrao1Michelle Lee2Chun Wing Yeung3Asis Sarker4Shang-Lin Hsu5Ajay Kumar Yadav6Liv Dedon7Long You8Asif Islam Khan9James David Clarkson10Chenming Hu11Ramamoorthy Ramesh12Sayeef Salahuddin13Department of Electrical Engineering and Computer Sciences, University of CaliforniaDepartment of Electrical Engineering and Computer Sciences, University of CaliforniaDepartment of Physics, University of CaliforniaDepartment of Electrical Engineering and Computer Sciences, University of CaliforniaDepartment of Electrical Engineering and Computer Sciences, University of CaliforniaMaterial Science Division, Lawrence Berkeley National LaboratoryDepartment of Material Science and Engineering, University of CaliforniaDepartment of Material Science and Engineering, University of CaliforniaDepartment of Electrical Engineering and Computer Sciences, University of CaliforniaDepartment of Electrical Engineering and Computer Sciences, University of CaliforniaDepartment of Material Science and Engineering, University of CaliforniaDepartment of Electrical Engineering and Computer Sciences, University of CaliforniaDepartment of Material Science and Engineering, University of CaliforniaDepartment of Electrical Engineering and Computer Sciences, University of CaliforniaSynthesis of single-crystal complex-oxide films directly on silicon is difficult due to differing interfacial chemistry. Here, the authors demonstrate room-temperature integration of single-crystal lead zirconate titanate on to silicon to act as a gate insulator in a field-effect transistor.https://doi.org/10.1038/ncomms10547
collection DOAJ
language English
format Article
sources DOAJ
author Saidur Rahman Bakaul
Claudy Rayan Serrao
Michelle Lee
Chun Wing Yeung
Asis Sarker
Shang-Lin Hsu
Ajay Kumar Yadav
Liv Dedon
Long You
Asif Islam Khan
James David Clarkson
Chenming Hu
Ramamoorthy Ramesh
Sayeef Salahuddin
spellingShingle Saidur Rahman Bakaul
Claudy Rayan Serrao
Michelle Lee
Chun Wing Yeung
Asis Sarker
Shang-Lin Hsu
Ajay Kumar Yadav
Liv Dedon
Long You
Asif Islam Khan
James David Clarkson
Chenming Hu
Ramamoorthy Ramesh
Sayeef Salahuddin
Single crystal functional oxides on silicon
Nature Communications
author_facet Saidur Rahman Bakaul
Claudy Rayan Serrao
Michelle Lee
Chun Wing Yeung
Asis Sarker
Shang-Lin Hsu
Ajay Kumar Yadav
Liv Dedon
Long You
Asif Islam Khan
James David Clarkson
Chenming Hu
Ramamoorthy Ramesh
Sayeef Salahuddin
author_sort Saidur Rahman Bakaul
title Single crystal functional oxides on silicon
title_short Single crystal functional oxides on silicon
title_full Single crystal functional oxides on silicon
title_fullStr Single crystal functional oxides on silicon
title_full_unstemmed Single crystal functional oxides on silicon
title_sort single crystal functional oxides on silicon
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2016-02-01
description Synthesis of single-crystal complex-oxide films directly on silicon is difficult due to differing interfacial chemistry. Here, the authors demonstrate room-temperature integration of single-crystal lead zirconate titanate on to silicon to act as a gate insulator in a field-effect transistor.
url https://doi.org/10.1038/ncomms10547
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