A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells

A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells

In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the...

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Bibliographic Details
Main Authors: Stefan Pechmann, Timo Mai, Matthias Völkel, Mamathamba K. Mahadevaiah, Eduardo Perez, Emilio Perez-Bosch Quesada, Marc Reichenbach, Christian Wenger, Amelie Hagelauer
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Electronics
Subjects:
analog circuit
memory programming
programming circuit
read circuit
resistive memory
RRAM
Online Access:https://www.mdpi.com/2079-9292/10/5/530

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