Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
We report on the fabrication and mechanical properties of all-oxide, free-standing, heteroepitaxial, piezoelectric, microelectromechanical systems (MEMS) on silicon, using PbZr0.52Ti0.48O3 as the key functional material. The fabrication was enabled by the development of an epitaxial lift-off strateg...
Main Authors: | N. Banerjee, E. P. Houwman, G. Koster, G. Rijnders |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2014-09-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/1.4893355 |
Similar Items
-
Research Update: Enhancement of figure of merit for energy-harvesters based on free-standing epitaxial Pb(Zr0.52Ti0.48)0.99Nb0.01O3 thin-film cantilevers
by: Minh D. Nguyen, et al.
Published: (2017-07-01) -
Fabrication and characterization of free-standing thick-film piezoelectric cantilevers for energy harvesting
by: Kok, Swee Leong, et al.
Published: (2009) -
Fabrication of stress controlled silicon oxide for free- standing MEMS Devices
by: Guan, Dong, S.M. Massachusetts Institute of Technology
Published: (2014) -
The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN
by: Cheng-Hung Shih, et al.
Published: (2014-12-01) -
Heteroepitaxial Growth of III-V Semiconductors on Silicon
by: Jae-Seong Park, et al.
Published: (2020-12-01)