Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon

Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon

We report on the fabrication and mechanical properties of all-oxide, free-standing, heteroepitaxial, piezoelectric, microelectromechanical systems (MEMS) on silicon, using PbZr0.52Ti0.48O3 as the key functional material. The fabrication was enabled by the development of an epitaxial lift-off strateg...

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Main Authors: N. Banerjee, E. P. Houwman, G. Koster, G. Rijnders
Format: Article
Language:English
Published: AIP Publishing LLC 2014-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4893355
id doaj-b0815c3caa2447f68f43b4ac47f5f5f6
record_format Article
spelling doaj-b0815c3caa2447f68f43b4ac47f5f5f62020-11-24T22:23:22ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129096103096103-710.1063/1.4893355003408APMFabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on siliconN. Banerjee0E. P. Houwman1G. Koster2G. Rijnders3Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The NetherlandsFaculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The NetherlandsFaculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The NetherlandsFaculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The NetherlandsWe report on the fabrication and mechanical properties of all-oxide, free-standing, heteroepitaxial, piezoelectric, microelectromechanical systems (MEMS) on silicon, using PbZr0.52Ti0.48O3 as the key functional material. The fabrication was enabled by the development of an epitaxial lift-off strategy for the patterning of multilayer oxide heterostructures grown on Si(001), employing a high temperature stable, sacrificial oxide template mask to obtain freestanding cantilever MEMS devices after substrate etching. All cantilevers, with lengths in the range 25–325 μm, width 50 μm, and total thickness of 300 nm, can be actuated by an external AC-bias. For lengths 50–125 μm, the second order bending mode formed the dominant resonance, whereas for the other lengths different or multiple modes were present.http://dx.doi.org/10.1063/1.4893355
collection DOAJ
language English
format Article
sources DOAJ
author N. Banerjee
E. P. Houwman
G. Koster
G. Rijnders
spellingShingle N. Banerjee
E. P. Houwman
G. Koster
G. Rijnders
Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
APL Materials
author_facet N. Banerjee
E. P. Houwman
G. Koster
G. Rijnders
author_sort N. Banerjee
title Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
title_short Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
title_full Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
title_fullStr Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
title_full_unstemmed Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
title_sort fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2014-09-01
description We report on the fabrication and mechanical properties of all-oxide, free-standing, heteroepitaxial, piezoelectric, microelectromechanical systems (MEMS) on silicon, using PbZr0.52Ti0.48O3 as the key functional material. The fabrication was enabled by the development of an epitaxial lift-off strategy for the patterning of multilayer oxide heterostructures grown on Si(001), employing a high temperature stable, sacrificial oxide template mask to obtain freestanding cantilever MEMS devices after substrate etching. All cantilevers, with lengths in the range 25–325 μm, width 50 μm, and total thickness of 300 nm, can be actuated by an external AC-bias. For lengths 50–125 μm, the second order bending mode formed the dominant resonance, whereas for the other lengths different or multiple modes were present.
url http://dx.doi.org/10.1063/1.4893355
work_keys_str_mv AT nbanerjee fabricationofpiezodrivenfreestandingalloxideheteroepitaxialcantileversonsilicon
AT ephouwman fabricationofpiezodrivenfreestandingalloxideheteroepitaxialcantileversonsilicon
AT gkoster fabricationofpiezodrivenfreestandingalloxideheteroepitaxialcantileversonsilicon
AT grijnders fabricationofpiezodrivenfreestandingalloxideheteroepitaxialcantileversonsilicon
_version_ 1725764566347939840

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